5961000034779

SEMICONDUCTOR DEVICE,THYRISTOR

Part No.: C10FR581G,CR59004,0N149987,

NSN Summary
NSN Description Assign Criticality Status Codification Country
5961000034779 SEMICONDUCTOR DEVICE,THYRISTOR 05/24/1972 X Active

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Issued Closing Solicitation Clin Cage ECV Status

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Manufacturers

Part Number Company Cage P/N added P/N deleted RNVC RNCC RNAAC RNFC SADC DAC Item Status
C10FR581G ######### ######### ######### ######### ######### ######### ######### ######### ######### ######### #########
CR59004 ######### ######### ######### ######### ######### ######### ######### ######### ######### ######### #########
0N149987 ######### ######### ######### ######### ######### ######### ######### ######### ######### ######### #########

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Procurement History

Company Cage Award Date Qty Unit Price Total Price Contract Delivery

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Management Data

MOE SOS AAC Unit Pack UOM Unit Price SLC Date ELA FCS MCC

Technical Info

Name Value
SEMICONDUCTOR MATERIAL SILICON
MOUNTING METHOD THREADED STUD
OVERALL WIDTH ACROSS FLATS 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY 2 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT 98230-0N149987 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING)
INCLOSURE MATERIAL METAL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 50.0 MAXIMUM BREAKOVER VOLTAGE, DC
NOMINAL THREAD SIZE 0.190 INCHES
MOUNTING FACILITY QUANTITY 1
POWER RATING PER CHARACTERISTIC 500.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION
THREAD SERIES DESIGNATOR UNF
OVERALL LENGTH 1.204 INCHES NOMINAL
CURRENT RATING PER CHARACTERISTIC 60.00 AMPERES FORWARD CURRENT, AVERAGE ABSOLUTE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 150.0 DEG CELSIUS CASE
FEATURES PROVIDED HERMETICALLY SEALED CASE

A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.


FIIG Inc Info

FIIG INC Description Detail
33096 33096 SEMICONDUCTOR DEVICE,THYRISTOR

MOE Data

Country MOE AMC AMSC NIMSC Eff Date IMC IMCA DSOR Collaborator Receiver AAC FMOE
YA01 12/01/1999
S019 04/01/1991
ZW01 12/01/1995
ZB01 04/01/1991

Freight Data

Integrity Originating HMC WCC TCC SHC ADC ACC ASH LTL NMFC NMFC Sub Item UFC Freight Description Rail Variance
XN 658 Z 9 A H Z W 063025 Z 34525 SEMICONDUCTORS/DEVICES NOI ETC

Packaging Data

Source PICA / SICA Packaging Category Storage Preservation Clean/Dry INT Qty Unit Weight Unit Size Unit Pack Cube Item Weight Item Dims
A P 69F0 96 X XXX 0.1 lbs 0.003 cu ft
Preservation Material Wrapping Material Cushioning / Dunnage Cushioning Thickness Unit Container Intermediate Container UCL Special Marking Level A Packing Level B Packing Minimal Packing Optional Procedure
XX XX XX X XX XX 00 E Q U

Item Standardization

Status Code Originator Date Status
Not Standardized yet 97 05/07/1990 Active